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SCT3160KL n-channel sic power mosfet range of storage temperature t stg ? 55 to ? 175 c gate - source voltage v gss ? 4 to 22 v junction temperature t j 175 c gate-source surge voltage v gss_surge ? 4 to 22 v t c = 100c i d *1 12 a pulsed drain current i d,pulse *2 42 a continuous drain current t c = 25c i d *1 17 a unit drain - source voltage v dss 1200 v value ? induction heating ? motor drives ? absolute maximum ratings (t a = 25c) parameter symbol c11 ? dc/dc converters marking SCT3160KL ? switch mode power supplies ? packaging specifications 5) simple to drive type packing tube 6) pb-free lead plating ; rohs compliant reel size (mm) - tape width (mm) - ? application basic ordering unit (pcs) 30 ? solar inverters taping code ? features 1) low on-resistance 2) fast switching speed 3) fast reverse recovery 4) easy to parallel recommended drive voltage v gs_op 0 / 18 v ? outline v dss 1200v to-247n r ds(on) (typ.) 160m ? i d 17a p d 103w ? inner circuit (1) gate (2) drain (3) source *1 body diode (1) (3) (2) *1 (1) (2) (3) 1/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? example of acceptable vgs waveform ? gate input resistance r g f = 1mhz, open drain - 18 - 160 208 t j = 125c - 240 - 5.6 v static drain - source on - state resistance r ds(on) *3 v gs = 18v, i d = 5a m ? t j = 25c gate threshold voltage v gs (th) v ds = 10v, i d = 2.5ma 2.7 - - gate - source leakage current i gss ? v gs = ? 22v, v ds = 0v - - 100 na gate - source leakage current i gss ? v gs = ? 4v, v ds = 0v -- ? 100 na 110 t j = 150c -2- v zero gate voltage drain current i dss v ds = 1200v, v gs = 0v ? a t j = 25c - drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 1200 - - unit min. typ. max. thermal resistance, junction - case r thjc - 1.12 1.46 ? c/w ? electrical characteristics (t a = 25c) parameter symbol conditions values ? thermal resistance parameter symbol values unit min. typ. max. 2/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s, duty cycle ? 1% *3 pulsed v -18- gate plateau voltage v (plateau) v dd = 600v, i d = 5a - 9.6 - nc gate - source charge q gs *3 i d = 5a -11- gate - drain charge q gd *3 v gs = 18v total gate charge q g *3 v dd = 600v -42- ? gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. ? j turn - off switching loss e off *3 -12- turn - on switching loss e on *3 v dd = 600v, i d =5a v gs = 18v/0v r g = 0 ? l=750 ? h *e on includes diode reverse recovery -62- - t r *3 v gs = 18v/0v -18- turn - off delay time t d(off) *3 r l =80? -24 18 - pf turn - on delay time t d(on) *3 v dd = 400v, i d =5a -14- ns rise time effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 600v -45- - fall time t f *3 r g = 0 ? -25 s input capacitance c iss v gs = 0v - 398 - pf output capacitance c oss transconductance g fs *3 v ds = 10v, i d = 5a - 2.5 - v ds = 800v -41- reverse transfer capacitance c rss f = 1mhz - ? electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? body diode electrical characteristics (source-drain) (t a = 25c) a q rr *3 -26-nc peak reverse recovery current i rrm *3 -4- v reverse recovery time t rr *3 i f =5a, v r = 600v di/dt = 1100a/ ? s -13-ns reverse recovery charge forward voltage v sd *3 v gs = 0v, i s = 5a - 3.2 - a inverse diode direct current, pulsed i sm *2 - - 42 a inverse diode continuous, forward current i s *1 t c = 25c --17 parameter symbol conditions values unit min. typ. max. 4/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 t a = 25oc single pulse fig.1 power dissipation derating curve power dissipation : p d [w] junction temperature : t j [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 typical transient thermal resistance vs. pulse width transient thermal resistance : r th [k/w] pulse width : p w [s] 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 t a = 25oc single pulse p w = 10ms p w = 100s p w = 1ms p w = 100ms operation in this area is limited by r ds(on) 5/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.4 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.5 typical output characteristics(ii) drain - source voltage : v ds [v] fig.6 t j = 150oc typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.7 t j = 150oc typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] 0 2 4 6 8 10 12 14 16 18 20 0246810 t a = 25oc pulsed 10v v gs = 8v 16v 18v 14v 20v 12v 0 1 2 3 4 5 6 7 8 9 10 012345 t a = 25oc pulsed v gs = 8v 10v 14v 16v 18v 20v 12v 0 2 4 6 8 10 12 14 16 18 20 0246810 t a = 150oc pulsed 10v v gs = 8v 18v 16v 20v 14v 12v 0 1 2 3 4 5 6 7 8 9 10 012345 t a = 150oc pulsed 10v v gs = 8v 16v 14v 20v 18v 12v 6/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.8 typical transfer characteristics (i) drain current : i d [a] gate - source voltage : v gs [v] fig.9 typical transfer characteristics (ii) gate - source voltage : v gs [v] fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [oc] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] drain current : i d [a] 0.1 1 10 0.1 1 10 v ds = 10v pulsed t a = 150oc t a = 75oc t a = 25oc t a = ? 25oc 0 1 2 3 4 5 6 -50 0 50 100 150 200 v ds = 10v i d = 2.5ma 0.01 0.1 1 10 100 0 2 4 6 8 101214161820 t a = 150oc t a = 75oc t a = 25oc t a = ? 25oc v ds = 10v pulsed 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 t a = 150oc t a = 75oc t a = 25oc t a = ? 25oc v ds = 10v pulsed 7/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.12 static drain - source on - state resistance vs. gate - source voltage static drain - source on-state resistance : r ds(on) [ ? ] gate - source voltage : v gs [v] fig.13 static drain - source on - state resistance vs. junction temperature junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. drain current drain current : i d [a] static drain - source on-state resistance : r ds(on) [ ? ] static drain - source on-state resistance : r ds(on) [ ? ] 0.00 0.08 0.16 0.24 0.32 0.40 0.48 0.56 0.64 6 8 10 12 14 16 18 20 22 i d = 5a i d = 11a t a = 25oc pulsed 0.00 0.08 0.16 0.24 0.32 0.40 0.48 0.56 0.64 -50 0 50 100 150 200 v gs = 18v pulsed i d = 11a i d = 5a 0.01 0.1 1 110100 v gs = 18v pulsed t a = 150oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 8/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.15 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.16 coss stored energy drain - source voltage : v ds [v] fig.17 switching characteristics switching time : t [ns] drain current : i d [a] fig.18 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] coss stored energy : e oss [ ? j] 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 t a = 25oc 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 t a = 25oc v dd = 600v i d = 5a pulsed 1 10 100 1000 10000 0.1 1 10 100 t d(on) t d(off) t a = 25oc v dd = 400v v gs = 18v r g = 0 ? pulsed t f t r 9/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.19 typical switching loss vs. drain - source voltage switching energy : e [ ? j] drain - source voltage : v ds [v] fig.20 typical switching loss vs. drain current drain current : i d [a] fig.21 typical switching loss vs. external gate resistance switching energy : e [ ? j] external gate resistance : r g [ ? ] switching energy : e [ ? j] 0 80 160 240 320 400 480 560 02468101214161820 t a = 25oc v dd =600v v gs = 18v/0v r g =0 ? l=750 ? h e on e off 0 20 40 60 80 100 120 140 200 400 600 800 1000 t a = 25oc i d =5a v gs = 18v/0v r g =0 ? l=750 ? h e on e off 0 80 160 240 320 400 480 560 0 5 10 15 20 25 30 t a = 25oc v dd =600v i d =5a v gs = 18v/0v l=750 ? h e on e off 10/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? electrical characteristic curves fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current inverse diode forward current : i s [a] reverse recovery time : t rr [ns] 0.01 0.1 1 10 100 012345678 v gs = 0v pulsed t a = 150oc t a = 75oc t a = 25oc t a = ? 25oc 10 100 1000 110100 t a = 25oc di / dt = 1100a / us v r = 600v v gs = 0v pulsed 11/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
SCT3160KL ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform d.u.t. v surge i rr e on = i d v ds e off = i d v ds i d v ds same type device as d.u.t. d.u.t. i d 12/12 2017.08 - rev.c datasheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
r1102 a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)
datasheet part number SCT3160KL package to-247n unit quantity 450 minimum package quantity 30 packing type tube constitution materials list inquiry rohs yes SCT3160KL - web page distribution inventory

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